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Type : ic, Field-Effect Transistor, IGBT Transistor
Operating Temperature : -55°C ~ 150°C (TJ)
Series : /
Mounting Type : Through Hole
Description : /
Model Number : IRF9640PBF
Place of Origin : Guangdong, China
Brand Name : original
D/C : 22+
Package Type : Throught Hole
Application : irf transistor
Supplier Type : Other
Cross Reference : NEW
Media Available : Other
Brand : MOSFET P-CH 200V 11A TO-220AB
Voltage - Collector Emitter Breakdown (Max) : ,
Vce Saturation (Max) @ Ib, Ic : ,
DC Current Gain (hFE) (Min) @ Ic, Vce : ,
Package / Case : TO-220-3
Resistor - Base (R1) : ,
Resistor - Emitter Base (R2) : ,
FET Type : P-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Rds On (Max) @ Id, Vgs : 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250uA
Gate Charge (Qg) (Max) @ Vgs : 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 25V
Frequency : ,
Current Rating (Amps) : ,
Noise Figure : ,
Power - Output : ,
Voltage - Rated : ,
Drive Voltage (Max Rds On, Min Rds On) : 10V
Vgs (Max) : ±20V
IGBT Type : ,
Configuration : /
Vce(on) (Max) @ Vge, Ic : ,
Input Capacitance (Cies) @ Vce : ,
Input : ,
NTC Thermistor : ,
Voltage - Breakdown (V(BR)GSS) : ,
Current - Drain (Idss) @ Vds (Vgs=0) : ,
Current Drain (Id) - Max : ,
Voltage - Cutoff (VGS off) @ Id : /
Resistance - RDS(On) : ,
Voltage : ,
Voltage - Output : ,
Voltage - Offset (Vt) : ,
Current - Gate to Anode Leakage (Igao) : ,
Current - Valley (Iv) : ,
Current - Peak : ,
Applications : ,
Transistor Type : mrf150 rf power transistor
Packaging Details : Anti-static packaging
Port : shenzhen
Supply Ability : 1000 Piece/Pieces per Week
MOQ : 10 pieces
Price : $0.40/pieces 10-99 pieces
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Original MOSFET P-CH 200V 11A TO-220AB IRF9640 Images |