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Type : ic chip, Field-Effect Transistor, IGBT Transistor
Operating Temperature : -55°C ~ 175°C (TJ)
Series : /
Mounting Type : Through Hole
Description : /
Model Number : IRF3710PBF
Place of Origin : Guangdong, China
Brand Name : original
D/C : 22+
Package Type : Throught Hole
Application : irf transistor
Supplier Type : Other
Cross Reference : NEW
Media Available : Other
Brand : MOSFET N-CH 100V 57A TO-220AB
Current - Collector (Ic) (Max) : 1.5A
Voltage - Collector Emitter Breakdown (Max) : 400V
Vce Saturation (Max) @ Ib, Ic : 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max) : 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce : 5 @ 1A, 2V
Power - Max : 40W
Frequency - Transition : standard
Package / Case : TO-220-3
Resistor - Base (R1) : /
Resistor - Emitter Base (R2) : /
FET Type : N-Channel
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 57A (Tc)
Rds On (Max) @ Id, Vgs : 23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id : /
Gate Charge (Qg) (Max) @ Vgs : 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 3130pF @ 25V
Frequency : /
Current Rating (Amps) : /
Noise Figure : /
Power - Output : /
Voltage - Rated : /
Drive Voltage (Max Rds On, Min Rds On) : 10V
Vgs (Max) : ±20V
IGBT Type : /
Configuration : /
Vce(on) (Max) @ Vge, Ic : /
Input Capacitance (Cies) @ Vce : /
Input : /
NTC Thermistor : /
Voltage - Breakdown (V(BR)GSS) : /
Current - Drain (Idss) @ Vds (Vgs=0) : /
Current Drain (Id) - Max : /
Voltage - Cutoff (VGS off) @ Id : /
Resistance - RDS(On) : /
Voltage : /
Voltage - Output : /
Voltage - Offset (Vt) : /
Current - Gate to Anode Leakage (Igao) : /
Current - Valley (Iv) : /
Current - Peak : /
Applications : /
Transistor Type : mrf150 rf power transistor
Packaging Details : Anti-static packaging
Port : SHENZHEN
Supply Ability : 1000 Piece/Pieces per Week
MOQ : 10 pieces
Price : $0.30/pieces 10-99 pieces
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New And Original MOSFET N-Channel Transistor 100V 57A IRF3710PBF Irf3710 Images |